MTN3205E3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN3205E3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
Maximum Drain Current |Id|: 128 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 91 nC
Rise Time (tr): 116 nS
Drain-Source Capacitance (Cd): 580 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm
Package: TO-220AB
MTN3205E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN3205E3 Datasheet (PDF)
mtn3205e3.pdf
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Spec. No. : C572E3 Issued Date : 2013.05.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 55VMTN3205E3 ID 128A3.9 m RDSON(TYP) @ VGS=10V, ID=62A RDSON(TYP) @ VGS=6V, ID=30A 4.5 m Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchin
mtn3207f3.pdf
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Spec. No. : C578F3 Issued Date : 2011.10.17 CYStech Electronics Corp.Revised Date : 2013.12.16 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 75V RDS(ON) : 8.6 m(typ.)MTN3207F3 ID : 80A Description The MTN3207F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn3207e3.pdf
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Spec. No. : C578E3 Issued Date : 2011.10.17 CYStech Electronics Corp.Revised Date : 2011.10.20 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 75V RDS(ON) : 8.6 m(typ.)MTN3207E3 ID : 80A Description The MTN3207E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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