All MOSFET. MTN3205E3 Datasheet

 

MTN3205E3 Datasheet and Replacement


   Type Designator: MTN3205E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 91 nC
   tr ⓘ - Rise Time: 116 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-220AB
 

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MTN3205E3 Datasheet (PDF)

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MTN3205E3

Spec. No. : C572E3 Issued Date : 2013.05.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 55VMTN3205E3 ID 128A3.9 m RDSON(TYP) @ VGS=10V, ID=62A RDSON(TYP) @ VGS=6V, ID=30A 4.5 m Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchin

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MTN3205E3

Spec. No. : C578F3 Issued Date : 2011.10.17 CYStech Electronics Corp.Revised Date : 2013.12.16 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 75V RDS(ON) : 8.6 m(typ.)MTN3207F3 ID : 80A Description The MTN3207F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

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MTN3205E3

Spec. No. : C578E3 Issued Date : 2011.10.17 CYStech Electronics Corp.Revised Date : 2011.10.20 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 75V RDS(ON) : 8.6 m(typ.)MTN3207E3 ID : 80A Description The MTN3207E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

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History: RU6199R | IPP028N08N3G

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