MTN3207E3 Specs and Replacement
Type Designator: MTN3207E3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 517 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO-220AB
MTN3207E3 substitution
- MOSFET ⓘ Cross-Reference Search
MTN3207E3 datasheet
mtn3207e3.pdf
Spec. No. C578E3 Issued Date 2011.10.17 CYStech Electronics Corp. Revised Date 2011.10.20 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDS(ON) 8.6 m (typ.) MTN3207E3 ID 80A Description The MTN3207E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒
mtn3207f3.pdf
Spec. No. C578F3 Issued Date 2011.10.17 CYStech Electronics Corp. Revised Date 2013.12.16 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDS(ON) 8.6 m (typ.) MTN3207F3 ID 80A Description The MTN3207F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒
mtn3205e3.pdf
Spec. No. C572E3 Issued Date 2013.05.06 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 55V MTN3205E3 ID 128A 3.9 m RDSON(TYP) @ VGS=10V, ID=62A RDSON(TYP) @ VGS=6V, ID=30A 4.5 m Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchin... See More ⇒
Detailed specifications: MTN2N70I3, MTN3018S3, MTN3023J3, MTN303KN3, MTN3055J3, MTN3055L3, MTN3055M3, MTN3205E3, IRF830, MTN3207F3, MTN3400N3, MTN3410F3, MTN3410J3, MTN3418BN3, MTN3418CN3, MTN3418N3, MTN3418S3
Keywords - MTN3207E3 MOSFET specs
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