MTN351AN3 Specs and Replacement
Type Designator: MTN351AN3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-23
MTN351AN3 substitution
- MOSFET ⓘ Cross-Reference Search
MTN351AN3 datasheet
mtn351an3.pdf
Spec. No. C410N3 Issued Date 2007.06.28 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN351AN3 Features V =30V DS @V =10V, I =3A R =60m GS D DS(ON) @V =4.5V, I =2A R =100m GS D DS(ON) Lower gate charge Compact and low profile SOT-23 package Equivalent Circuit Outline MTN351AN3 SO... See More ⇒
mtn35n03j3.pdf
Spec. No. C389J3 Issued Date 2007.06.12 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25V ID 36A MTN35N03J3 RDSON 13.5m Features Dynamic dv/dt Rating Single Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-... See More ⇒
Detailed specifications: MTN3418BN3, MTN3418CN3, MTN3418N3, MTN3418S3, MTN3434G6, MTN3440N6, MTN3484J3, MTN3484V8, AO4468, MTN35N03J3, MTN3607E3, MTN3607F3, MTN3820F3, MTN3820J3, MTN3K01N3, MTN3N60FP, MTN3N60I3
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