All MOSFET. MTN351AN3 Datasheet

 

MTN351AN3 Datasheet and Replacement


   Type Designator: MTN351AN3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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MTN351AN3 Datasheet (PDF)

 ..1. Size:464K  cystek
 mtn351an3.pdf pdf_icon

MTN351AN3

Spec. No. : C410N3 Issued Date : 2007.06.28 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN351AN3 Features V =30V DS@V =10V, I =3A R =60m GS DDS(ON)@V =4.5V, I =2A R =100m GS DDS(ON) Lower gate charge Compact and low profile SOT-23 package Equivalent Circuit Outline MTN351AN3 SO

 9.1. Size:407K  cystek
 mtn35n03j3.pdf pdf_icon

MTN351AN3

Spec. No. : C389J3 Issued Date : 2007.06.12 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25VID 36AMTN35N03J3 RDSON 13.5m Features Dynamic dv/dt Rating Single Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-

Datasheet: MTN3418BN3 , MTN3418CN3 , MTN3418N3 , MTN3418S3 , MTN3434G6 , MTN3440N6 , MTN3484J3 , MTN3484V8 , IRF730 , MTN35N03J3 , MTN3607E3 , MTN3607F3 , MTN3820F3 , MTN3820J3 , MTN3K01N3 , MTN3N60FP , MTN3N60I3 .

History: MTN3484V8

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