MTN4N60E3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN4N60E3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 12.2
nS
Cossⓘ -
Output Capacitance: 86
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1
Ohm
Package:
TO-220AB
MTN4N60E3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN4N60E3
Datasheet (PDF)
..1. Size:320K cystek
mtn4n60e3.pdf 
Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
7.1. Size:286K cystek
mtn4n60fp.pdf
Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
7.2. Size:357K cystek
mtn4n60j3.pdf
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60J3 ID : 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications
7.3. Size:315K cystek
mtn4n60afp.pdf
Spec. No. : C408FP-B Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) typ: 2.8 MTN4N60AFP ID : 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
7.4. Size:239K cystek
mtn4n60ae3.pdf
Spec. No. : C408E3-A Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60AE3 ID : 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
7.5. Size:339K cystek
mtn4n60i3.pdf
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
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