MTN4N60E3 - параметры транзистора MOSFET, его аналоги, datasheet

MTN4N60E3 Datasheet (PDF)

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Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

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Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

7.2. Size:357K cystek
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Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60J3 ID : 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

7.3. Size:315K cystek
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Spec. No. : C408FP-B Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) typ: 2.8 MTN4N60AFP ID : 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r