MTN5N60FP Specs and Replacement

Type Designator: MTN5N60FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.9 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220FP

MTN5N60FP substitution

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MTN5N60FP datasheet

 ..1. Size:287K  cystek
 mtn5n60fp.pdf pdf_icon

MTN5N60FP

Spec. No. C408FP-A Issued Date 2009.04.20 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60FP ID 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low ... See More ⇒

 7.1. Size:329K  cystek
 mtn5n60i3.pdf pdf_icon

MTN5N60FP

Spec. No. C408I3-A Issued Date 2010.03.09 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60I3 ID 5A Description The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

 7.2. Size:320K  cystek
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MTN5N60FP

Spec. No. C408E3-A Issued Date 2010.09.08 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60E3 ID 4.5A Description The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 7.3. Size:349K  cystek
 mtn5n60j3.pdf pdf_icon

MTN5N60FP

Spec. No. C408J3 Issued Date 2010.03.09 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60J3 ID 5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications ... See More ⇒

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Detailed specifications: MTN4N70I3, MTN50N06E3, MTN540J3, MTN5N50E3, MTN5N50FP, MTN5N50I3, MTN5N50J3, MTN5N60E3, IRF4905, MTN5N60I3, MTN5N60J3, MTN5N65FP, MTN60NF06LJ3, MTN6515E3, MTN6515F3, MTN6515H8, MTN6515J3

Keywords - MTN5N60FP MOSFET specs

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