All MOSFET. MTN5N60I3 Datasheet

 

MTN5N60I3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN5N60I3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.9 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-251

 MTN5N60I3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN5N60I3 Datasheet (PDF)

 ..1. Size:329K  cystek
 mtn5n60i3.pdf

MTN5N60I3 MTN5N60I3

Spec. No. : C408I3-A Issued Date : 2010.03.09 CYStech Electronics Corp.Revised Date : 2012.11.20 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1 (typ.) MTN5N60I3 ID : 5A Description The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 7.1. Size:287K  cystek
 mtn5n60fp.pdf

MTN5N60I3 MTN5N60I3

Spec. No. : C408FP-A Issued Date : 2009.04.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN5N60FP ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low

 7.2. Size:320K  cystek
 mtn5n60e3.pdf

MTN5N60I3 MTN5N60I3

Spec. No. : C408E3-A Issued Date : 2010.09.08 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN5N60E3 ID : 4.5A Description The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.3. Size:349K  cystek
 mtn5n60j3.pdf

MTN5N60I3 MTN5N60I3

Spec. No. : C408J3 Issued Date : 2010.03.09 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN5N60J3 ID : 5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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