All MOSFET. MTN6515E3 Datasheet

 

MTN6515E3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN6515E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 107 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-220AB

 MTN6515E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN6515E3 Datasheet (PDF)

 ..1. Size:234K  cystek
mtn6515e3.pdf

MTN6515E3
MTN6515E3

Spec. No. : C739E3 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2010.10.18 Page No. : 1/6 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 150VMTN6515E3 ID 20A65m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating Equivalent Circuit Outline TO-220 MTN6515E3GGate DDrain SS

 7.1. Size:283K  cystek
mtn6515f3.pdf

MTN6515E3
MTN6515E3

Spec. No. : C739F3 Issued Date : 2012.06.20 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTN6515F3 ID 20ARDS(ON)@VGS=10V, ID=15A 66m(typ) RDS(ON)@VGS=5V, ID=10A 64m(typ) RDS(ON)@VGS=3V, ID=3A 66m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating pack

 7.2. Size:264K  cystek
mtn6515j3.pdf

MTN6515E3
MTN6515E3

Spec. No. : C739J3 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2014.07.07 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 150VMTN6515J3 ID 20ARDS(ON)@VGS=10V, ID=15A 60m(typ) RDS(ON)@VGS=5V, ID=10A 59m(typ) RDS(ON)@VGS=3V, ID=3A 60m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead

 7.3. Size:357K  cystek
mtn6515h8.pdf

MTN6515E3
MTN6515E3

Spec. No. : C739H8 Issued Date : 2009.12.09 CYStech Electronics Corp.Revised Date : 2010.06.28 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 150VMTN6515H8ID 20ARDSON(max) 65m Description The MTN6515H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top