MTN7N60FP MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN7N60FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 114 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.08 Ohm
Package: TO-220FP
MTN7N60FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN7N60FP Datasheet (PDF)
mtn7n60fp.pdf
Spec. No. : C409FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 1.08(typ.) MTN7N60FP ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn7n60e3.pdf
Spec. No. : C409E3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 1.08(typ.) MTN7N60E3 ID : 7A Description The MTN7N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
mtn7n65fp.pdf
Spec. No. : C436FP Issued Date : 2009.01.22 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2 MTN7N65FP ID : 7A Description The MTN7N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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