All MOSFET. MTN8N60E3 Datasheet

 

MTN8N60E3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN8N60E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.3 nC
   trⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 121.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220AB

 MTN8N60E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN8N60E3 Datasheet (PDF)

 ..1. Size:287K  cystek
 mtn8n60e3.pdf

MTN8N60E3 MTN8N60E3

Spec. No. : C409E3-A Issued Date : 2009.08.04 CYStech Electronics Corp.Revised Date :2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V @Tj=150 RDS(ON) : 1.2 (max.) MTN8N60E3 ID : 7.5A Description The MTN8N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device des

 7.1. Size:285K  cystek
 mtn8n60fp.pdf

MTN8N60E3 MTN8N60E3

Spec. No. : C409FP-A Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(TYP) : 1.08 MTN8N60FP ID : 7.5A Description The MTN8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 8.1. Size:250K  cystek
 mtn8n65ea.pdf

MTN8N60E3 MTN8N60E3

Spec. No. : C727EA Issued Date : 2010.12.22 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.1(typ.) MTN8N65EA ID : 7.5A Description The MTN8N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 8.2. Size:237K  cystek
 mtn8n65e3.pdf

MTN8N60E3 MTN8N60E3

Spec. No. : C727E3 Issued Date : 2010.08.09 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2(typ.) MTN8N65E3 ID : 7.5A Description The MTN8N65E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 8.3. Size:326K  cystek
 mtn8n65fi.pdf

MTN8N60E3 MTN8N60E3

Spec. No. : C727FI Issued Date : 2012.09.26 CYStech Electronics Corp.Revised Date : 2015.03.16 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS 650VMTN8N65FI ID @ VGS=10V, TC=25C 7.5A 1.2 RDSON(TYP) @ VGS=10V, ID=3.75A Description The MTN8N65FI is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r

 8.4. Size:364K  cystek
 mtn8n65fp.pdf

MTN8N60E3 MTN8N60E3

Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.2(typ.) MTN8N65FP ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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