MTNK1N3 Specs and Replacement

Type Designator: MTNK1N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 5.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT-23

MTNK1N3 substitution

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MTNK1N3 datasheet

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 mtnk1n3.pdf pdf_icon

MTNK1N3

Spec. No. C320N3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2012.04.12 Page No. 1/7 N-CHANNEL MOSFET BVDSS 60V ID 300mA MTNK1N3 1.5 (typ.) RDSON@VGS=10V, ID=100mA 1.9 (typ.) RDSON@VGS=4.5V, ID=100mA Description The MTNK1N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching ... See More ⇒

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MTNK1N3

Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2009.11.12 Page No. 1/7 N-CHANNEL MOSFET MTNK1S3 Description The MTNK1S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-... See More ⇒

Detailed specifications: MTN8N60FP, MTN8N65E3, MTN8N65EA, MTN8N65FP, MTN8N70FP, MTN9240J3, MTN9971J3, MTN9973J3, IRFZ24N, MTNK1S3, MTNK2N3, MTNK2S3, MTNK3C3, MTNK3N3, MTNK3S3, MTNK3W3, MTNK3Y3

Keywords - MTNK1N3 MOSFET specs

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