All MOSFET. MTNK1N3 Datasheet

 

MTNK1N3 Datasheet and Replacement


   Type Designator: MTNK1N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 5.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-23
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MTNK1N3 Datasheet (PDF)

 ..1. Size:270K  cystek
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MTNK1N3

Spec. No. : C320N3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date :2012.04.12 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 60VID 300mAMTNK1N3 1.5(typ.)RDSON@VGS=10V, ID=100mA 1.9(typ.)RDSON@VGS=4.5V, ID=100mA Description The MTNK1N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching

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MTNK1N3

Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2009.11.12 Page No. : 1/7 N-CHANNEL MOSFET MTNK1S3 Description The MTNK1S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-

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History: STD6N10T4 | AON6794 | IRFHM792PBF | BUZ84 | VNS009D | CED05N8 | BL10N70-A

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