MTNK1N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTNK1N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT-23
MTNK1N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTNK1N3 Datasheet (PDF)
mtnk1n3.pdf
Spec. No. : C320N3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date :2012.04.12 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 60VID 300mAMTNK1N3 1.5(typ.)RDSON@VGS=10V, ID=100mA 1.9(typ.)RDSON@VGS=4.5V, ID=100mA Description The MTNK1N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching
mtnk1s3.pdf
Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2009.11.12 Page No. : 1/7 N-CHANNEL MOSFET MTNK1S3 Description The MTNK1S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: QH8MA2
History: QH8MA2
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