MTNK5C3 Specs and Replacement

Type Designator: MTNK5C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 7.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: SOT-523

MTNK5C3 substitution

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MTNK5C3 datasheet

 ..1. Size:320K  cystek
 mtnk5c3.pdf pdf_icon

MTNK5C3

Spec. No. C800C3 Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V MTNK5C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & halo... See More ⇒

 9.1. Size:319K  cystek
 mtnk5n3.pdf pdf_icon

MTNK5C3

Spec. No. C800N3 Issued Date 2010.07.19 CYStech Electronics Corp. Revised Date 2013.10.14 Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V MTNK5N3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla... See More ⇒

 9.2. Size:314K  cystek
 mtnk5s3.pdf pdf_icon

MTNK5C3

Spec. No. C800S3 Issued Date 2010.07.19 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V MTNK5S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla... See More ⇒

Detailed specifications: MTNK1S3, MTNK2N3, MTNK2S3, MTNK3C3, MTNK3N3, MTNK3S3, MTNK3W3, MTNK3Y3, 7N60, MTNK5N3, MTNK5S3, MTNK7S3, MTNN18N03Q8, MTNN20N03Q8, MTNN8451KQ8, MTNN8452KQ8, MTNN8453KQ8

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