MTNK5N3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTNK5N3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 7.3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4
Ohm
Package:
SOT-23
MTNK5N3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTNK5N3
Datasheet (PDF)
..1. Size:319K cystek
mtnk5n3.pdf 
Spec. No. : C800N3 Issued Date : 2010.07.19 CYStech Electronics Corp.Revised Date : 2013.10.14 Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30VMTNK5N3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla
9.1. Size:314K cystek
mtnk5s3.pdf
Spec. No. : C800S3 Issued Date : 2010.07.19 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30VMTNK5S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla
9.2. Size:320K cystek
mtnk5c3.pdf
Spec. No. : C800C3 Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30VMTNK5C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & halo
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