MTP1013C3 PDF and Equivalents Search

Spec. No. C698C3 Issued Date 2012.07.06 CYStech Electronics Corp. Revised Date 2014.06.17 Page No. 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP1013C3 ID -500mA RDSON@VGS=-4.5V, ID=-500mA 0.63 (typ) RDSON@VGS=-2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-150mA 1.7 (typ) Features Very low level gate drive requirements allowing direct operation... See More ⇒

Spec. No. C698S3 CYStech Electronics Corp. Issued Date 2012.07.13 Revised Date 2013.09.09 Page No. 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP1013S3 ID -540mA RDSON@VGS=-4.5V, ID=-430mA 0.64 (typ) RDSON@VGS=-4V, ID=-300mA 0.68 (typ) RDSON@VGS=-2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-150mA 1.9 (typ) Features Very low level gate drive r... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy... See More ⇒

... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also of... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also of... See More ⇒

... See More ⇒

... See More ⇒

... See More ⇒

MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, http //onsemi.com converters and PWM mo... See More ⇒

MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, 10 AMPERES converters... See More ⇒

... See More ⇒