Spec. No. : C698C3 Issued Date : 2012.07.06 CYStech Electronics Corp.Revised Date : 2014.06.17 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP1013C3 ID -500mARDSON@VGS=-4.5V, ID=-500mA 0.63(typ)RDSON@VGS=-2.5V, ID=-300mA 1.1(typ) RDSON@VGS=-1.8V, ID=-150mA 1.7(typ) Features Very low level gate drive requirements allowing direct operation

Spec. No. : C698S3 CYStech Electronics Corp. Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP1013S3 ID -540mARDSON@VGS=-4.5V, ID=-430mA 0.64(typ)RDSON@VGS=-4V, ID=-300mA 0.68(typ)RDSON@VGS=-2.5V, ID=-300mA 1.1(typ) RDSON@VGS=-1.8V, ID=-150mA 1.9(typ) Features Very low level gate drive r

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10EL/DDesigner's Data SheetMTP10N10ELLogic Level TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high10 AMPERESenergy in the avalanche and commutation modes. This new energy

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10E/DDesigner's Data SheetMTP10N10ETMOS IVPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETsThis advanced E series of TMOS power MOSFETs is designed10 AMPERESto withstand high energy in the avalanche and commutation100 VOLTSmodes. These new energy efficient d

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10E/DDesigner's Data SheetMTP10N10ETMOS IVPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETsThis advanced E series of TMOS power MOSFETs is designed10 AMPERESto withstand high energy in the avalanche and commutation100 VOLTSmodes. These new energy efficient d

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of

MTP10N10ELPreferred DevicePower MOSFET10 A, 100 V, Logic Level, N-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,http://onsemi.comconverters and PWM mo

MTP10N10EPreferred DevicePower MOSFET10 Amps, 100 VoltsNChannel TO220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers draintosource diodes with fast recovery times. Designed forlow voltage, high speed switching applications in power supplies,10 AMPERESconverters

Spec. No. : C962C6 Issued Date : 2014.07.31 CYStech Electronics Corp. Revised Date : Page No. : 1/ 8 P-Channel Enhancement Mode MOSFET MTP1067C6 BVDSS -20V ID -1.06A VGS=-4.5V, ID=-1.06A 0.112 Features VGS=-2.5V, ID=-1.0A 0.149 RDSON(TYP) High speed switching VGS=-1.8V, ID=-0.49A 0.206 Low-voltage drive(-1.8V) Easily designed drive circuits