MTP1406J3 Specs and Replacement

Type Designator: MTP1406J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO-252

MTP1406J3 substitution

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MTP1406J3 datasheet

 ..1. Size:328K  cystek
 mtp1406j3.pdf pdf_icon

MTP1406J3

Spec. No. C733J3 Issued Date 2011.05.25 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP1406J3 ID -10A 90.8m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTP1406J3 TO-252AB TO-252AA G D S G D S G... See More ⇒

 7.1. Size:238K  cystek
 mtp1406m3.pdf pdf_icon

MTP1406J3

Spec. No. C733M3 Issued Date 2011.05.16 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/5 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -60V MTP1406M3 ID -4A 90.8m RDSON(MAX) Features Single Drive Requirement Low On-resistance, RDS(ON)=90.8m @VGS=-10V, ID=-4A Ultra High Speed Switching Pb-free lead plated package Symbol... See More ⇒

 7.2. Size:560K  cystek
 mtp1406l3.pdf pdf_icon

MTP1406J3

Spec. No. C733L3 Issued Date 2012.02.14 CYStech Electronics Corp. Revised Date 2014.07.25 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP1406L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) 99m (typ.) RDSON@VGS=-4.5V, ID=-2A Features Simple Drive Requirement Low On-resistance Fast ... See More ⇒

 9.1. Size:242K  motorola
 mtp14n10e.pdf pdf_icon

MTP1406J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP14N10E/D Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS efficient design also offers a drain... See More ⇒

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Detailed specifications: MTNN18N03Q8, MTNN20N03Q8, MTNN8451KQ8, MTNN8452KQ8, MTNN8453KQ8, MTP1013C3, MTP1013S3, MTP1067C6, AOD4184A, MTP1406L3, MTP1406M3, MTP162M3, MTP2010J3, MTP2071M3, MTP2301N3, MTP2301S3, MTP2303N3

Keywords - MTP1406J3 MOSFET specs

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