MTP1406L3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP1406L3
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 4.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 54
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.074
Ohm
Package:
SOT-223
MTP1406L3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP1406L3
Datasheet (PDF)
..1. Size:560K cystek
mtp1406l3.pdf
Spec. No. : C733L3 Issued Date : 2012.02.14 CYStech Electronics Corp. Revised Date : 2014.07.25 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP1406L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) 99m (typ.) RDSON@VGS=-4.5V, ID=-2A Features Simple Drive Requirement Low On-resistance Fast
7.1. Size:328K cystek
mtp1406j3.pdf
Spec. No. : C733J3 Issued Date : 2011.05.25 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTP1406J3 ID -10A90.8m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTP1406J3TO-252AB TO-252AA G D S G D S G
7.2. Size:238K cystek
mtp1406m3.pdf
Spec. No. : C733M3 Issued Date : 2011.05.16 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/5 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -60VMTP1406M3 ID -4A90.8m RDSON(MAX) Features Single Drive Requirement Low On-resistance, RDS(ON)=90.8m@VGS=-10V, ID=-4A Ultra High Speed Switching Pb-free lead plated package Symbol
9.1. Size:242K motorola
mtp14n10e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP14N10E/DAdvance InformationMTP14N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high14 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain
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