MTP2301S3 Specs and Replacement

Type Designator: MTP2301S3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT-323

MTP2301S3 substitution

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MTP2301S3 datasheet

 ..1. Size:302K  cystek
 mtp2301s3.pdf pdf_icon

MTP2301S3

Spec. No. C322S3 CYStech Electronics Corp. Issued Date 2013.08.29 Revised Date 2013.09.09 Page No. 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301S3 ID -1.6A 75m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m (typ.) RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance ... See More ⇒

 7.1. Size:607K  cystek
 mtp2301n3.pdf pdf_icon

MTP2301S3

Spec. No. C322N3 CYStech Electronics Corp. Issued Date 2004.04.05 Revised Date 2018.08.31 Page No. 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25 C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res... See More ⇒

 7.2. Size:869K  cn vbsemi
 mtp2301n3.pdf pdf_icon

MTP2301S3

MTP2301N3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

 8.1. Size:710K  cystek
 mtp2305n3.pdf pdf_icon

MTP2301S3

Spec. No. C417N3 Issued Date 2007.07.27 CYStech Electronics Corp. Revised Date 2018.12.06 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25 C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features ... See More ⇒

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Detailed specifications: MTP1067C6, MTP1406J3, MTP1406L3, MTP1406M3, MTP162M3, MTP2010J3, MTP2071M3, MTP2301N3, IRF3205, MTP2303N3, MTP2305N3, MTP2311M3, MTP2311N3, MTP2311V8, MTP2317N3, MTP2402Q8, MTP2603G6

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