MTP2305N3 Specs and Replacement

Type Designator: MTP2305N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SOT-23

MTP2305N3 substitution

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MTP2305N3 datasheet

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 mtp2305n3.pdf pdf_icon

MTP2305N3

Spec. No. C417N3 Issued Date 2007.07.27 CYStech Electronics Corp. Revised Date 2018.12.06 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25 C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features ... See More ⇒

 8.1. Size:607K  cystek
 mtp2301n3.pdf pdf_icon

MTP2305N3

Spec. No. C322N3 CYStech Electronics Corp. Issued Date 2004.04.05 Revised Date 2018.08.31 Page No. 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25 C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res... See More ⇒

 8.2. Size:302K  cystek
 mtp2301s3.pdf pdf_icon

MTP2305N3

Spec. No. C322S3 CYStech Electronics Corp. Issued Date 2013.08.29 Revised Date 2013.09.09 Page No. 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301S3 ID -1.6A 75m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m (typ.) RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance ... See More ⇒

 8.3. Size:702K  cystek
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MTP2305N3

Spec. No. C426N3 Issued Date 2008.03.24 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS ... See More ⇒

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Detailed specifications: MTP1406L3, MTP1406M3, MTP162M3, MTP2010J3, MTP2071M3, MTP2301N3, MTP2301S3, MTP2303N3, IRF840, MTP2311M3, MTP2311N3, MTP2311V8, MTP2317N3, MTP2402Q8, MTP2603G6, MTP2603N6, MTP2603Q6

Keywords - MTP2305N3 MOSFET specs

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