MTP2311N3 Spec and Replacement
Type Designator: MTP2311N3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 56 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SOT-23
MTP2311N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP2311N3 Specs
mtp2311n3.pdf
Spec. No. C733N3 Issued Date 2011.12.27 CYStech Electronics Corp. Revised Date Page No. 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60V MTP2311N3 ID -3.5A RDSON@VGS=-10V, ID=-2A 72m (typ) RDSON@VGS=-4.5V,ID=-1.7A 98m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell... See More ⇒
mtp2311m3.pdf
Spec. No. C733M3 Issued Date 2013.09.18 CYStech Electronics Corp. Revised Date Page No. 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60V ID -4A MTP2311M3 RDSON@VGS=-10V, ID=-4A 72m (typ.) RDSON@VGS=-4.5V, ID=-3A 98m (typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin... See More ⇒
mtp2311v8.pdf
Spec. No. C733V8 Issued Date 2013.06.24 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60V MTP2311V8 ID -11A RDSON@VGS=10V, ID=-3A 63m (typ) RDSON@VGS=-4.5V, ID=-2A 78m (typ) Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized... See More ⇒
mtp2317n3.pdf
Spec. No. C566N3 CYStech Electronics Corp. Issued Date 2012.04.12 Revised Date 2014.01.14 Page No. 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP2317N3 ID -5.8A 28m (typ.) RDSON@VGS=-4.5V, ID=-4.5A 35m (typ.) RDSON@VGS=-2.5V, ID=-2.5A 51m (typ.) RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f... See More ⇒
Detailed specifications: MTP162M3 , MTP2010J3 , MTP2071M3 , MTP2301N3 , MTP2301S3 , MTP2303N3 , MTP2305N3 , MTP2311M3 , IRF540N , MTP2311V8 , MTP2317N3 , MTP2402Q8 , MTP2603G6 , MTP2603N6 , MTP2603Q6 , MTP2611V8 , MTP2955L3 .
History: TF3404
Keywords - MTP2311N3 MOSFET specs
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