MTP3401N3 Specs and Replacement

Type Designator: MTP3401N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOT-23

MTP3401N3 substitution

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MTP3401N3 datasheet

 ..1. Size:421K  cystek
 mtp3401n3.pdf pdf_icon

MTP3401N3

Spec. No. C388N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2017.06.19 Page No. 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3401N3 ID@VGS=-10V, TA=25 C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 51m (typ) RDS(ON)@VGS=-2.5V, ID=-1A 59m (typ) Features Advanced trench process technology High density c... See More ⇒

 8.1. Size:340K  cystek
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MTP3401N3

Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit... See More ⇒

 8.2. Size:392K  cystek
 mtp3403an3.pdf pdf_icon

MTP3401N3

Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low ... See More ⇒

 8.3. Size:300K  cystek
 mtp3403kn3.pdf pdf_icon

MTP3401N3

Spec. No. C865N3 Issued Date 2012.08.08 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP3403KN3 ID -3.3A RDS(ON)@VGS=-10V, ID=-2.5A 63m (typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m (typ) RDS(ON)@VGS=-4V, ID=-1.35A 114m (typ) Features Advanced trench process technology High density cell design for ultra low... See More ⇒

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Detailed specifications: MTP2317N3, MTP2402Q8, MTP2603G6, MTP2603N6, MTP2603Q6, MTP2611V8, MTP2955L3, MTP3001N3, IRFP260N, MTP3403AN3, MTP3403KN3, MTP3403N3, MTP3413N3, MTP3415KN3, MTP3J15N3, MTP3J15Y3, MTP3LP01N3

Keywords - MTP3401N3 MOSFET specs

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