MTP4403Q8 Specs and Replacement

Type Designator: MTP4403Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.6 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP-8

MTP4403Q8 substitution

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MTP4403Q8 datasheet

 ..1. Size:622K  cystek
 mtp4403q8.pdf pdf_icon

MTP4403Q8

Spec. No. C791Q8 Issued Date 2010.07.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4403Q8 RDSON(MAX) 50m ID -6.1A Description The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 7.1. Size:621K  cystek
 mtp4403sq8.pdf pdf_icon

MTP4403Q8

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46m ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒

 8.1. Size:284K  cystek
 mtp4409h8.pdf pdf_icon

MTP4403Q8

Spec. No. C808H8 Issued Date 2013.09.02 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP4409H8 ID -15A 7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi... See More ⇒

 8.2. Size:336K  cystek
 mtp4409q8.pdf pdf_icon

MTP4403Q8

Spec. No. C808Q8 Issued Date 2012.04.03 CYStech Electronics Corp. Revised Date 2014.05.16 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m (typ) RDSON@VGS=-4.5V, ID=-10A 11.4m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free ... See More ⇒

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Detailed specifications: MTP3J15Y3, MTP3LP01N3, MTP3LP01S3, MTP3LP01Y3, MTP405CJ3, MTP405J3, MTP4060J3, MTP4151N3, 2SK3878, MTP4403SQ8, MTP4409H8, MTP4409Q8, MTP4411AQ8, MTP4411M3, MTP4411Q8, MTP4413Q8, MTP4423Q8

Keywords - MTP4403Q8 MOSFET specs

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