MTP4835V8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP4835V8
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 33
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 138
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
DFN3X3
MTP4835V8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP4835V8
Datasheet (PDF)
..1. Size:363K cystek
mtp4835v8.pdf
Spec. No. : C830V8 Issued Date : 2013.01.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP4835V8 ID -33A16m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 25m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-7A Description The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of
7.1. Size:335K cystek
mtp4835l3.pdf
Spec. No. : C830L3 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4835L3 BVDSS -30VID -10A21m (typ) RDSON@VGS=-10V, ID=-10A 28m (typ) RDSON@VGS=-5V, ID=-7A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalen
7.2. Size:305K cystek
mtp4835aq8.pdf
Spec. No. : C830Q8 Issued Date : 2012.09.19 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4835AQ8 ID -10ARDSON@VGS=-10V, ID=-10A 18m(typ)RDSON@VGS=-4.5V,ID=-6A 27m(typ)Description The MTP4835AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s
7.3. Size:301K cystek
mtp4835q8.pdf
Spec. No. : C830Q8 Issued Date : 2012.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4835Q8 ID -10ARDSON@VGS=-10V, ID=-10A 17m(typ)RDSON@VGS=-4.5V,ID=-6A 26m(typ)Description The MTP4835Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rug
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