MTP9575Q8 Datasheet and Replacement
Type Designator: MTP9575Q8
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOP-8
MTP9575Q8 substitution
MTP9575Q8 Datasheet (PDF)
mtp9575q8.pdf

Spec. No. : C404Q8 Issued Date : 2008.02.04 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9575Q8 Description The MTP9575Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack
mtp9575l3.pdf

Spec. No. : C404L3 Issued Date : 2007.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-Channel Enhancement Mode Power MOSFET MTP9575L3 Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free package Symbol Outline SOT-223 MTP9575L3D S GGate D DDrain G SSource Absolute Maximum Ra
mtp9575j3.pdf

Spec. No. : C404J3 Issued Date : 2008.09.19 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -60VID -15AMTP9575J3 RDSON 90m Features Single Drive Requirement Low On-resistance Fast switching Characteristic RoHS compliant package Symbol Outline TO-252 MTP9575J3GGate G D S D
Datasheet: MTP7425Q8 , MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 , MTP9575J3 , MTP9575L3 , P0903BDG , MTP9620Q8 , MTP9620V8 , MTS3572G6 , AO3160 , AO3162 , AO3400A , AO3402 , AO3403 .
History: BUZ73AL | MP4N150 | SSM3K329R
Keywords - MTP9575Q8 MOSFET datasheet
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History: BUZ73AL | MP4N150 | SSM3K329R



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