AO3415A Specs and Replacement
Type Designator: AO3415A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT23
AO3415A substitution
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AO3415A datasheet
ao3415a.pdf
AO3415A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V) ... See More ⇒
ao3415a.pdf
SMD Type MOSFET P-Channel MOSFET AO3415A (KO3415A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V) 1 2 +0.1 0.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01 +0.1 1.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate 2. Source D 3. Dra... See More ⇒
ao3415a.pdf
R UMW UMW AO3415A SOT-23 Plastic-Encapsulate MOSFETS UMW AO3415A P-Channel 20-V(D-S) MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 50m @-4.5V -20V 60m @-2.5V -4A 1. GATE 73m @-1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G AFHV S Maximum ratings... See More ⇒
Detailed specifications: AO3404, AO3404A, AO3406, AO3407A, AO3409, AO3413, AO3414, AO3415, AO3400A, AO3416, AO3418, AO3419, AO3420, AO3421, AO3421E, AO3422, AO3423
Keywords - AO3415A MOSFET specs
AO3415A cross reference
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AO3415A replacement
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History: BL10N60-A
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