FSL9230D Datasheet and Replacement
Type Designator: FSL9230D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO205AF
FSL9230D substitution
FSL9230D Datasheet (PDF)
fsl9230.pdf

FSL9230D,FSL9230R3A, -200V, 1.50 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 3A, -200V, rDS(ON) = 1.50 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD
fsl923ao.pdf

FSL923AOD,S E M I C O N D U C T O RFSL923AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 5A, -200V, rDS(ON) = 0.670 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military space- Meets Pre-RAD Specifications
Datasheet: FSL430D , FSL430R , FSL9110D , FSL9110R , FSL9130D , FSL9130R , FSL913AOD , FSL913AOR , 8205A , FSL9230R , FSL923AOD , FSL923AOR , FSS130D , FSS130R , FSS13AOD , FSS13AOR , FSS230D .
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