FSL9230D Datasheet. Specs and Replacement
Type Designator: FSL9230D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO205AF
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FSL9230D substitution
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FSL9230D datasheet
fsl9230.pdf
FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 3A, -200V, rDS(ON) = 1.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD ... See More ⇒
fsl923ao.pdf
FSL923AOD, S E M I C O N D U C T O R FSL923AOR Radiation Hardened, September 1997 SEGR Resistant P-Channel Power MOSFETs Features Description 5A, -200V, rDS(ON) = 0.670 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space - Meets Pre-RAD Specifications ... See More ⇒
Detailed specifications: FSL430D, FSL430R, FSL9110D, FSL9110R, FSL9130D, FSL9130R, FSL913AOD, FSL913AOR, IRFP260, FSL9230R, FSL923AOD, FSL923AOR, FSS130D, FSS130R, FSS13AOD, FSS13AOR, FSS230D
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