AO3423
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3423
Marking Code: AS3TF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.5
nC
trⓘ - Rise Time: 5.5
nS
Cossⓘ -
Output Capacitance: 63
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.092
Ohm
Package:
SOT23
AO3423
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3423
Datasheet (PDF)
..1. Size:282K aosemi
ao3423.pdf 
AO342320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3423 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)
..2. Size:717K shenzhen
ao3423.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423AO3423P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3423 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)
..3. Size:1760K kexin
ao3423.pdf
SMD TypeAO3423 (KO3423)SOT-23Unit: mm+0.22.9-0.2+0.10.4 -0.0531 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.2-0.2D ESD Rating: 2000V HBMG 1. Gate2. Source3. DrainS 0.4+0.2+0.22.8-0.21.6-0.10.55+0.21.1-0.1+0.10-0.10.38-0.1SMD TypeAO3423 (KO3423)TestconditionsAS*SMD TypeAO3423 (KO3423)1015-10.0V-4.0VVDS=-5V-8
..4. Size:868K cn vbsemi
ao3423.pdf
AO3423www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
0.1. Size:1969K kexin
ao3423-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET AO3423 (KO3423)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.0 A (VGS =-10V)D1 2 RDS(ON) 92m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 118m (VGS =-4.5V) +0.11.9 -0.2 RDS(ON) 166m (VGS =-2.5V)G1. Gate2. Source3. DrainS Abso
0.2. Size:388K umw-ic
ao3423a.pdf
RUMW UMW AO3423ASOT-23-3L Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETAO3423AV(BR)DSS RDS(on)MAX ID120m@-4.5V-20 V -2A150m@-2.5VFEATUREAPPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices ESD Protected 2.0KV DC/DC ConverterMARKINGEquivalent Circuit SOT23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 un
0.3. Size:2456K anbon
ao3423b.pdf
P-Channel MOSFET AO3423BSOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0
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