AO3424 Datasheet and Replacement

AO342430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3424 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 3.8Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO3424 (KO3424)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 3.8 A (VGS = 10 V)1 2 RDS(ON) 55m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1. Gate2. SourceDD3. DrainG GSS Absolute Ma

AO3424N-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFETChannel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Channel Enhancement Mode MOSFETFeature Feature 30V/2.0A, RDS(ON) = 35m(MAX) @V = 10V. 30V/2.0A, RDS(ON) = 35m(MAX) @VGS = 10V. RDS(ON) =40m(MAX) @VGS = 4.5V.DS(ON) =40m(MAX) @V = 4.5V. RDS(ON) =55m(MAX) @VGS = 2.5V.DS(ON) =5

SMD Type MOSFETN-Channel MOSFETAO3424 (KO3424)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 3.8 A (VGS = 10 V)1 2 RDS(ON) 55m (VGS = 10V)+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 65m (VGS = 4.5V) +0.11.9 -0.2 RDS(ON) 85m (VGS = 2.5V)1. Gate2. SourceDD3. DrainG GSS Absolute

AO342320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3423 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

AO342020V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO3420 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 6Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It offers ID = 2.1A (VGS = 4.5V)operation over a wide gate drive range from 2.5V to RDS(ON)

AO3421E30V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO3421E combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -3Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AO342130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3421 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423AO3423P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3423 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., LtdAO3420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and VDS (V) = 20Voperation with gate voltages as low as 1.8V while ID = 6 A (VGS = 10V)retaining a 12V VGS(MAX) rating. This device is RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3422AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It ID = 2.1A (VGS = 4.5V)offers operation over a wide gate drive range from RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO3421E (KO3421E)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-3 A (VGS =-10V)1 2 RDS(ON) 95m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 160m (VGS =-4.5V)1. GateD 2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol R

SMD TypeAO3423 (KO3423)SOT-23Unit: mm+0.22.9-0.2+0.10.4 -0.0531 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.2-0.2D ESD Rating: 2000V HBMG 1. Gate2. Source3. DrainS 0.4+0.2+0.22.8-0.21.6-0.10.55+0.21.1-0.1+0.10-0.10.38-0.1SMD TypeAO3423 (KO3423)TestconditionsAS*SMD TypeAO3423 (KO3423)1015-10.0V-4.0VVDS=-5V-8

SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 200m (VGS = 2.5V)+0.11.9 -0.2D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETN-Channel MOSFETAO3420 (KO3420)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 6 A (VGS = 10V)1 2 RDS(ON) 24m (VGS = 10V)+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 27m (VGS = 4.5V)1.9+0.1-0.1 RDS(ON) 42m (VGS = 2.5V) RDS(ON) 55m (VGS = 1.8V)1. Gate2. Source3. DrainD

SMD Type MOSFETP-Channel Enhancement MOSFET AO3423 (KO3423)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.0 A (VGS =-10V)D1 2 RDS(ON) 92m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 118m (VGS =-4.5V) +0.11.9 -0.2 RDS(ON) 166m (VGS =-2.5V)G1. Gate2. Source3. DrainS Abso

SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 200m (VGS = 2.5V)1.9+0.1-0.1D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

SMD Type MOSFETN-Channel MOSFETAO3420 (KO3420)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 6 A (VGS = 10V)1 2 RDS(ON) 24m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 27m (VGS = 4.5V) 1.9 -0.2 RDS(ON) 42m (VGS = 2.5V) RDS(ON) 55m (VGS = 1.8V)1. Gate2. Source3. Drai

SMD Type MOSFETP-Channel MOSFETAO3421E (KO3421E)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-3 A (VGS =-10V)1 2 RDS(ON) 95m (VGS =-10V)+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 160m (VGS =-4.5V) +0.11.9-0.11. GateD 2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type MOSFETP-Channel MOSFETAO3421 (KO3421)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-2.6 A (VGS =-10V)1 2 RDS(ON) 110m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 180m (VGS =-4.5V) 1.9 -0.2D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type MOSFETP-Channel MOSFETAO3421 (KO3421)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 110m (VGS =-10V) 1 2+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 180m (VGS =-4.5V)+0.11.9 -0.1D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

RUMW UMW AO3423ASOT-23-3L Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETAO3423AV(BR)DSS RDS(on)MAX ID120m@-4.5V-20 V -2A150m@-2.5VFEATUREAPPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices ESD Protected 2.0KV DC/DC ConverterMARKINGEquivalent Circuit SOT23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 un

RUMW AO3422AUMW UMW AO3422AN-Channel 60-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID105m@10V60 V 2.1A125m@4.5VFEATURE TrenchFET Power MOSFETSOT23 APPLICATION Load Switch for Portable Devicest DC/DC Conver erMARKING Equivalent Circuit1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Sou

P-Channel MOSFET AO3423BSOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0

Plastic-Encapsulate MosfetsAO3420 Features N-Channel MOSFETVDS 20V, VGS 8V, ID 2.2A, RDS(ON) = 75m @VGS = 4.5V. RDS(ON) = 90m @VGS = 2.5V. Advanced trench process technology High-density cell design for ultra low on-resistance Compact and low profile SOT23 package General Description AO3420 is produced with high cell density DMOS trench technology, which is especi

AO3420N-Channel Enhancement Mode MOSFET FeatureDS(ON) GS 20V/6A, R = 35m(MAX) @V = 4.5V. DS(ON) GS R = 45m(MAX) @V = 2.5V. SC-59 DS(ON) . Super High dense cell design for extremely low R Reliable and Rugged. SC-59 for Surface Mount Package. SC-59 Applications LI-ION Protection Circuit Absolute Maximum Ratings AT =25 Unless Ot

AO3423www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

AO3422www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

AO3421Ewww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)