All MOSFET. AO4260 Datasheet

 

AO4260 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4260

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8.5 nS

Drain-Source Capacitance (Cd): 445 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm

Package: SO-8

AO4260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4260 Datasheet (PDF)

1.1. ao4260.pdf Size:338K _aosemi

AO4260
AO4260

AO4260 60V N-Channel MOSFET General Description Product Summary VDS 60V The AO4260 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 18A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 5.2mΩ switching power losses are minimized due to an RDS(ON) (at VGS =4.5V) < 6.3mΩ extremely low combinati

1.2. ao4260.pdf Size:1746K _kexin

AO4260
AO4260

SMD Type MOSFET N-Channel MOSFET AO4260 (KO4260) SOP-8 ■ Features ● VDS (V) = 60V ● ID = 18 A (VGS = 10V) ● RDS(ON) < 5.2mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 6.3mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D 8 Drain 4 Gate G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gat

 5.1. ao4266e.pdf Size:383K _aosemi

AO4260
AO4260

AO4266E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A • Low RDS(ON) • Logic Level Gate Drive RDS(ON) (at VGS=10V) < 13.5mΩ • ESD Protected RDS(ON) (at VGS=4.5V) < 18mΩ • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Typical ESD protection HB

5.2. ao4262e.pdf Size:388K _aosemi

AO4260
AO4260

AO4262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 16.5A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 6.5mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 8.5mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply

 5.3. ao4268.pdf Size:377K _aosemi

AO4260
AO4260

AO4268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 19A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.8mΩ RDS(ON) (at VGS=4.5V) < 6.5mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger SOIC-8 D Top View Bottom View D D D

5.4. ao4264e.pdf Size:390K _aosemi

AO4260
AO4260

AO4264E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 13.5A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 9.8mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 13.5mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply

 5.5. ao4264.pdf Size:367K _aosemi

AO4260
AO4260

AO4264 60V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology 60V • Low RDS(ON) ID (at VGS=10V) 12A • Low Gate Charge RDS(ON) (at VGS=10V) < 11mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 13.5mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Co

5.6. ao4266.pdf Size:389K _aosemi

AO4260
AO4260

AO4266 60V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 60V • Low RDS(ON) ID (at VGS=10V) 10A • Low Gate Charge RDS(ON) (at VGS=10V) < 15mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 19mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters •

5.7. ao4264.pdf Size:2479K _kexin

AO4260
AO4260

SMD Type MOSFET N-Channel MOSFET AO4264 (KO4264) SOP-8 ■ Features ● VDS (V) = 60V ● ID = 12 A (VGS = 10V) ● RDS(ON) < 11mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 13.5mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gat

5.8. ao4266.pdf Size:2186K _kexin

AO4260
AO4260

SMD Type MOSFET N-Channel MOSFET AO4266 (KO4266) SOP-8 ■ Features ● VDS (V) = 60V ● ID = 10 A (VGS = 10V) ● RDS(ON) < 15mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 19mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-

Datasheet: AO3434 , AO3434A , AO3435 , AO3438 , AO3442 , AO3460 , AO4202 , AO4240 , IRFP4229 , AO4264 , AO4266 , AO4286 , AO4292 , AO4302 , AO4304 , AO4310 , AO4312 .

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