AO4260 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO4260
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 8.5 ns
Выходная емкость (Cd): 445 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0052 Ohm
Тип корпуса: SO-8
AO4260 Datasheet (PDF)
ao4260.pdf
AO426060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO4260 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 18Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
ao4260.pdf
SMD Type MOSFETN-Channel MOSFETAO4260 (KO4260)SOP-8 Features VDS (V) = 60V ID = 18 A (VGS = 10V) RDS(ON) 5.2m (VGS = 10V)1.50 0.15 RDS(ON) 6.3m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat
ao4262e.pdf
AO4262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
ao4268.pdf
AO4268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 19A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
ao4264e.pdf
AO4264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 13.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
ao4266.pdf
AO426660V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 10A Low Gate Charge RDS(ON) (at VGS=10V)
ao4266e.pdf
AO4266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
ao4264.pdf
AO426460V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
ao4266.pdf
SMD Type MOSFETN-Channel MOSFETAO4266 (KO4266)SOP-8 Features VDS (V) = 60V ID = 10 A (VGS = 10V) RDS(ON) 15m (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-
ao4264.pdf
SMD Type MOSFETN-Channel MOSFETAO4264 (KO4264)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 11m (VGS = 10V)1.50 0.15 RDS(ON) 13.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
