AO4266 Datasheet and Replacement
Type Designator: AO4266
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 123 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SO-8
AO4266 substitution
AO4266 Datasheet (PDF)
ao4266.pdf

AO426660V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 10A Low Gate Charge RDS(ON) (at VGS=10V)
ao4266.pdf

SMD Type MOSFETN-Channel MOSFETAO4266 (KO4266)SOP-8 Features VDS (V) = 60V ID = 10 A (VGS = 10V) RDS(ON) 15m (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-
ao4266e.pdf

AO4266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
ao4262e.pdf

AO4262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - AO4266 MOSFET datasheet
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