AO4302 Datasheet and Replacement
Type Designator: AO4302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 474 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SO-8
AO4302 substitution
AO4302 Datasheet (PDF)
ao4302.pdf
AO430230V N-Channel MOSFET30 36General Description Product SummaryVDS30VThe AO4302 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
ao4302.pdf
SMD Type MOSFETN-Channel MOSFETAO4302 (KO4302)SOP-8 Features VDS (V) = 30V ID = 23 A (VGS = 10V) RDS(ON) 4m (VGS = 10V)1.50 0.15 RDS(ON) 5m (VGS = 4.5V)ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD D8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
ao4306.pdf
AO430630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4306 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
ao4304.pdf
AO430430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4304 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Datasheet: AO3460 , AO4202 , AO4240 , AO4260 , AO4264 , AO4266 , AO4286 , AO4292 , IRF3205 , AO4304 , AO4310 , AO4312 , AO4314 , AO4354 , AO4402 , AO4403 , AO4404B .
Keywords - AO4302 MOSFET datasheet
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