AO4302 Datasheet and Replacement
Type Designator: AO4302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 19 nC
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 474 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SO-8
AO4302 substitution
AO4302 Datasheet (PDF)
ao4302.pdf

AO430230V N-Channel MOSFET30 36General Description Product SummaryVDS30VThe AO4302 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
ao4302.pdf

SMD Type MOSFETN-Channel MOSFETAO4302 (KO4302)SOP-8 Features VDS (V) = 30V ID = 23 A (VGS = 10V) RDS(ON) 4m (VGS = 10V)1.50 0.15 RDS(ON) 5m (VGS = 4.5V)ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD D8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
ao4306.pdf

AO430630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4306 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
ao4304.pdf

AO430430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4304 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FK16UM-6
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