AO4302
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4302
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 474
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
SO-8
AO4302
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4302
Datasheet (PDF)
..1. Size:514K aosemi
ao4302.pdf 
AO430230V N-Channel MOSFET30 36General Description Product SummaryVDS30VThe AO4302 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
..2. Size:2098K kexin
ao4302.pdf
SMD Type MOSFETN-Channel MOSFETAO4302 (KO4302)SOP-8 Features VDS (V) = 30V ID = 23 A (VGS = 10V) RDS(ON) 4m (VGS = 10V)1.50 0.15 RDS(ON) 5m (VGS = 4.5V)ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD D8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
9.1. Size:437K aosemi
ao4306.pdf
AO430630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4306 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
9.2. Size:532K aosemi
ao4304.pdf
AO430430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4304 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.3. Size:2496K kexin
ao4306.pdf
SMD Type MOSFETN-Channel MOSFETAO4306 (KO4306)SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V)1.50 0.15 RDS(ON) 11.5m (VGS = 10V) RDS(ON) 15.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G
9.4. Size:2131K kexin
ao4304.pdf
SMD Type MOSFETN-Channel MOSFETAO4304 (KO4304)SOP-8 Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6m (VGS = 10V) RDS(ON) 7.6m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 DrainDD 4 GateG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
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