AO4476A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4476A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.6
nC
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0077
Ohm
Package:
SO-8
AO4476A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4476A
Datasheet (PDF)
..1. Size:365K aosemi
ao4476a.pdf 
AO4476A 30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4476A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 15Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
..2. Size:2008K kexin
ao4476a.pdf
SMD Type MOSFETN-Channel MOSFETAO4476A (KO4476A)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.7m (VGS = 10V)1.50 0.15 RDS(ON) 10.8m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
8.1. Size:1222K kexin
ao4476.pdf
SMD Type MOSFETN-Channel MOSFETAO4476 (KO4476)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Ga
9.1. Size:158K aosemi
ao4472.pdf
AO4472 N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4472 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.comID = 19A (VGS = 10V)characteristics and ultra-low gate resistance. This device is RDS(ON)
9.2. Size:129K aosemi
ao4474.pdf
AO4474N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4474/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 13.4A (VGS = 10V)general purpose applications. RDS(ON)
9.3. Size:192K aosemi
ao4478.pdf
AO447830V N-Channel MOSFETGeneral Description Product SummaryThe AO4478 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge. ThisID = 9A (VGS = 10V)device is suitable for use as general puspose, PWM andRDS(ON)
9.4. Size:1096K kexin
ao4478.pdf
SMD Type MOSFETN-Channel MOSFETAO4478 (KO4478)SOP-8 Features VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-S
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