AO4476A Datasheet and Replacement
Type Designator: AO4476A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
Package: SO-8
AO4476A substitution
AO4476A Datasheet (PDF)
ao4476a.pdf
AO4476A 30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4476A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 15Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
ao4476a.pdf
SMD Type MOSFETN-Channel MOSFETAO4476A (KO4476A)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.7m (VGS = 10V)1.50 0.15 RDS(ON) 10.8m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
ao4476.pdf
SMD Type MOSFETN-Channel MOSFETAO4476 (KO4476)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Ga
ao4472.pdf
AO4472 N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4472 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.comID = 19A (VGS = 10V)characteristics and ultra-low gate resistance. This device is RDS(ON)
Datasheet: AO4450 , AO4452 , AO4453 , AO4454 , AO4455 , AO4459 , AO4466 , AO4468 , IRF1010E , AO4478 , AO4480 , AO4482 , AO4484 , AO4485 , AO4486 , AO4488 , AO4490 .
Keywords - AO4476A MOSFET datasheet
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