AO4478 Datasheet and Replacement
Type Designator: AO4478
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO-8
AO4478 substitution
AO4478 Datasheet (PDF)
ao4478.pdf

AO447830V N-Channel MOSFETGeneral Description Product SummaryThe AO4478 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge. ThisID = 9A (VGS = 10V)device is suitable for use as general puspose, PWM andRDS(ON)
ao4478.pdf

SMD Type MOSFETN-Channel MOSFETAO4478 (KO4478)SOP-8 Features VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-S
ao4472.pdf

AO4472 N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4472 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.comID = 19A (VGS = 10V)characteristics and ultra-low gate resistance. This device is RDS(ON)
ao4474.pdf

AO4474N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4474/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 13.4A (VGS = 10V)general purpose applications. RDS(ON)
Datasheet: AO4452 , AO4453 , AO4454 , AO4455 , AO4459 , AO4466 , AO4468 , AO4476A , IRF1407 , AO4480 , AO4482 , AO4484 , AO4485 , AO4486 , AO4488 , AO4490 , AO4494 .
Keywords - AO4478 MOSFET datasheet
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History: NCEP0120Q | PP2915AK



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