AO4478 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO4478
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.3 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.019 Ohm
Тип корпуса: SO-8
AO4478 Datasheet (PDF)
ao4478.pdf
AO447830V N-Channel MOSFETGeneral Description Product SummaryThe AO4478 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge. ThisID = 9A (VGS = 10V)device is suitable for use as general puspose, PWM andRDS(ON)
ao4478.pdf
SMD Type MOSFETN-Channel MOSFETAO4478 (KO4478)SOP-8 Features VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-S
ao4472.pdf
AO4472 N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4472 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.comID = 19A (VGS = 10V)characteristics and ultra-low gate resistance. This device is RDS(ON)
ao4474.pdf
AO4474N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4474/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 13.4A (VGS = 10V)general purpose applications. RDS(ON)
ao4476a.pdf
AO4476A 30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4476A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 15Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
ao4476.pdf
SMD Type MOSFETN-Channel MOSFETAO4476 (KO4476)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Ga
ao4476a.pdf
SMD Type MOSFETN-Channel MOSFETAO4476A (KO4476A)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.7m (VGS = 10V)1.50 0.15 RDS(ON) 10.8m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
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