AO4576
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4576
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.8
nC
trⓘ - Rise Time: 3.3
nS
Cossⓘ -
Output Capacitance: 441
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058
Ohm
Package:
SO-8
AO4576
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4576
Datasheet (PDF)
..1. Size:330K aosemi
ao4576.pdf
AO457630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:1558K kexin
ao4576.pdf
SMD Type MOSFETN-Channel MOSFETAO4576 (KO4576)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V)1.50 0.15 RDS(ON) 5.8m (VGS = 10V) RDS(ON) 9.8m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.1. Size:333K aosemi
ao4578.pdf
AO457830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:1693K kexin
ao4578.pdf
SMD Type MOSFETN-Channel MOSFETAO4578 (KO4578)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V)1.50 0.15 RDS(ON) 5.7m (VGS = 10V) RDS(ON) 9m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
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