AO4627 Specs and Replacement

Type Designator: AO4627

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5(3.5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.5(4.1) nS

Cossⓘ - Output Capacitance: 35(42) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05(0.1) Ohm

Package: SO-8

AO4627 substitution

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AO4627 datasheet

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AO4627

AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration ID= 4.5A (VGS=10V) -3.5A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) ... See More ⇒

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AO4627

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AO4627

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) ... See More ⇒

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AO4627

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a ... See More ⇒

Detailed specifications: AO4611, AO4612, AO4613, AO4614B, AO4616, AO4618, AO4620, AO4622, 2N60, AO4629, AO4706, AO4710, AO4712, AO4714, AO4718, AO4720, AO4724

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