AO4629 Specs and Replacement
Type Designator: AO4629
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6(5.5) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5(5.5) nS
Cossⓘ - Output Capacitance: 45(100) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.041) Ohm
Package: SO-8
AO4629 substitution
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AO4629 datasheet
ao4629.pdf
AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) ... See More ⇒
ao4622.pdf
AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a ... See More ⇒
ao4620.pdf
AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) in inverter and other applications. RDS(ON) RDS(ON) ... See More ⇒
Detailed specifications: AO4612, AO4613, AO4614B, AO4616, AO4618, AO4620, AO4622, AO4627, 8N60, AO4706, AO4710, AO4712, AO4714, AO4718, AO4720, AO4724, AO4752
Keywords - AO4629 MOSFET specs
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