Справочник MOSFET. AO4629

 

AO4629 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AO4629
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6(5.5) A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2 nC
   trⓘ - Время нарастания: 2.5(5.5) ns
   Cossⓘ - Выходная емкость: 45(100) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03(0.041) Ohm
   Тип корпуса: SO-8

 Аналог (замена) для AO4629

 

 

AO4629 Datasheet (PDF)

 ..1. Size:849K  aosemi
 ao4629.pdf

AO4629 AO4629

AO462930V Complementary MOSFETGeneral Description Product SummaryAO4629 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 30V -30Vcomplementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V)ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

 ..2. Size:3043K  kexin
 ao4629.pdf

AO4629 AO4629

SMD Type MOSFETComplementary Trench MOSFETAO4629 (KO4629)SOP-8Unit:mm FeaturesN-Channel VDS (V) = 30V ID = 6 A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V)1 S2 5 D1 P-Channel6 D12 G2 VDS (V) = -30V 7 D23 S18 D24 G1 ID = -5.5 A (VGS = -10V) RDS(ON) 41m (VGS = -10V) RDS(ON)

 9.1. Size:251K  aosemi
 ao4622.pdf

AO4629 AO4629

AO462220V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4622 uses advanced trench technology VDS (V) = 20V -20VMOSFETs to provide excellent RDS(ON) and low gateID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V)charge. The complementary MOSFETs may be usedRDS(ON) RDS(ON)to form a level shifted high side switch, and for a

 9.2. Size:301K  aosemi
 ao4620.pdf

AO4629 AO4629

AO4620Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4620 uses advanced trench technology n-channel p-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30Vcharge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V)in inverter and other applications. RDS(ON) RDS(ON)

 9.3. Size:563K  aosemi
 ao4627.pdf

AO4629 AO4629

AO462730V Complementary MOSFETGeneral Description Product SummaryThe AO4627 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 30V -30Vcomplementary N and P channel MOSFET configuration ID= 4.5A (VGS=10V) -3.5A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

 9.4. Size:2869K  kexin
 ao4624.pdf

AO4629 AO4629

SMD Type MOSFETComplementary Trench MOSFET AO4624 (KO4624)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 6.9 A (VGS = 10V)1.50 0.15RDS(ON) 28m (VGS = 10V)RDS(ON) 42m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -6 A (VGS = -4.5V)RDS(ON) 35m (VGS = -10V)RDS(ON) 58m (VGS = -4.5V)

 9.5. Size:1949K  kexin
 ao4622.pdf

AO4629 AO4629

SMD Type MOSFETComplementary Trench MOSFET AO4622 (KO4622)SOP-8Unit:mm Features N-Channel : VDS (V) = 20VID = 7.3 A (VGS = 4.5V)1.50 0.15RDS(ON) 23m (VGS = 10V)RDS(ON) 30m (VGS = 4.5V)1 S1 5 D2 RDS(ON) 84m (VGS = 2.5V) 6 D22 G17 D13 S2 P-Channel : 8 D14 G2 VDS (V) = -20VID = -5 A (VGS = -4.5V)RDS(ON) 53m (VGS = -10V

 9.6. Size:2318K  kexin
 ao4620.pdf

AO4629 AO4629

SMD Type MOSFETComplementary Trench MOSFET AO4620 (KO4620)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 7.2 A (VGS = 10V)1.50 0.15RDS(ON) 24m (VGS = 10V)RDS(ON) 36m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -5.3 A (VGS = -10V)RDS(ON) 32m (VGS = -10V)RDS(ON) 55m (VGS = -4.5V)

 9.7. Size:3159K  kexin
 ao4627.pdf

AO4629 AO4629

SMD Type MOSFETComplementary Trench MOSFETAO4627 (KO4627)SOP-8 Unit:mm FeaturesN-Channel VDS (V) = 30V ID = 4.5 A (VGS = 10V)1.50 0.15 RDS(ON) 50m (VGS = 10V) RDS(ON) 68m (VGS = 4.5V)1 S2 5 D1 P-Channel2 G2 6 D13 S1 7 D2 VDS (V) = -30V4 G1 8 D2 ID = -3.5 A (VGS = -10V) RDS(ON) 100m (VGS = -10V) RDS(ON)

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History: FMP13N60ES

 

 
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