AO4718 Datasheet and Replacement
Type Designator: AO4718
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 382 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SO-8
AO4718 substitution
AO4718 Datasheet (PDF)
ao4718.pdf

AO471830V N-Channel MOSFETSRFET TM General Description FeaturesTMSRFET The AO4718 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integratedID =15A (VGS = 10V)Schottky diode to provide excellent RDS(ON),andlow gate charge. This device is suitable for use RDS(ON)
ao4718.pdf

SMD Type MOSFET N-Channel MOSFETAO4718 (KO4718)SOP-8 Unit:mm Features VDS (V) = 30V ID = 15 A (VGS = 10V)1.50 0.15 RDS(ON) 9m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25
ao4712.pdf

AO471230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AO4712 uses advanced trench technology with ID (at VGS=10V) 13Aa monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
ao4714.pdf

AO471430V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET AO4714 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =20A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)
Datasheet: AO4620 , AO4622 , AO4627 , AO4629 , AO4706 , AO4710 , AO4712 , AO4714 , IRFZ48N , AO4720 , AO4724 , AO4752 , AO4771 , AO4800 , AO4800B , AO4801 , AO4801A .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - AO4718 MOSFET datasheet
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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