AO4801 Specs and Replacement

Type Designator: AO4801

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SO-8

AO4801 substitution

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AO4801 datasheet

 ..1. Size:274K  aosemi
ao4801.pdf pdf_icon

AO4801

AO4801 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) ... See More ⇒

 ..2. Size:1538K  kexin
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AO4801

SMD Type MOSFET Dual P-Channel MOSFET AO4801 (KO4801) SOP-8 Unit mm Features VDS (V) = -30V ID = -5 A (VGS = -10V) 1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) RDS(ON) 80m (VGS = -2.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating U... See More ⇒

 ..3. Size:864K  cn vbsemi
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AO4801

AO4801 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View ... See More ⇒

 0.1. Size:274K  aosemi
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AO4801

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Detailed specifications: AO4714, AO4718, AO4720, AO4724, AO4752, AO4771, AO4800, AO4800B, IRF9640, AO4801A, AO4803, AO4803A, AO4805, AO4806, AO4807, AO4812, AO4813

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