AO480130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

SMD Type MOSFETDual P-Channel MOSFETAO4801 (KO4801)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) RDS(ON) 80m (VGS = -2.5V) 1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U

AO4801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

AO4801A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -5Aextremely low RDS(ON).This device is suitable for use as a RDS(ON) (at VGS=-10V)

SMD Type MOSFETDual P-Channel MOSFETAO4801A (KO4801A)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V)1 S2 5 D1 RDS(ON) 80m (VGS = -2.5V)6 D12 G27 D23 S18 D24 G1D2D1G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

AO480530V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4805 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-20V) -9Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

AO4800B30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4800B uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9AMOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V)

AO480730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4807 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -6Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AO480330V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -5Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

AO480030V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4800 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

AO480620V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO4806 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON) and low gate charge. TheyID = 9.4A (VGS = 10V)offer operation over a wide gate drive range fromRDS(ON)

AO4803A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

SMD Type MOSFETDual P-Channel MOSFETAO4805 (KO4805)SOP-8 Unit:mm Features VDS (V) = -30V ID = -9 A (VGS = -20V)1.50 0.15 RDS(ON) 15m (VGS = -20V) RDS(ON) 18m (VGS = -10V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V

SMD Type MOSFETDual P-Channel MOSFETAO4807 (KO4807)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -6 A (VGS = -10V) RDS(ON) 35m (VGS = -10V)1 S2 5 D1 RDS(ON) 58m (VGS = -4.5V)2 G2 6 D13 S1 7 D24 G1 8 D2D1D1D2D2G1G1G2G2S1S1S2S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

SMD Type MOSFETDual P-Channel MOSFETAO4803 (KO4803)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

SMD Type MOSFETDual N-Channel MOSFETAO4800 (KO4800)SOP-8 Unit:mm Features VDS (V) = 30V ID = 6.9 A (VGS = 10V)1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V)1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V)6 D12 G27 D23 S18 D24 G1D2D1G2G1S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type MOSFETDual N-Channel MOSFETAO4806 (KO4806)SOP-8 Features VDS (V) = 20V ID = 9.4 A (VGS = 10V) RDS(ON) 14m (VGS = 10V)1.50 0.15 RDS(ON) 15m (VGS = 4.5V) RDS(ON) 21m (VGS = 2.5V) RDS(ON) 30m (VGS = 1.8V)1 Source2 5 Drain16 Drain12 Gate2 ESD Rating: 2000V HBM7 Drain23 Source18 Drain24 Gate1D2

SMD Type MOSFETDual P-Channel MOSFETAO4803A (KO4803A)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vo

www.msksemi.comAO4803-MSSemiconductor CompianceProduct SummarySOP-8VDS-30VI (at V =-10V) -5AD GSR (at V =-10V)

AO4805www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1 2

AO4800www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L

AO4806www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25To