AO4840 Datasheet. Specs and Replacement

Type Designator: AO4840  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO-8

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AO4840 datasheet

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AO4840

AO4840 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6A charge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V) ... See More ⇒

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AO4840

SMD Type MOSFET Dual N-Channel MOSFET AO4840 (KO4840) SOP-8 Unit mm Features VDS (V) = 40V 1.50 0.15 ID = 6A (VGS = 10V) RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-So... See More ⇒

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AO4840

AO4840 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M... See More ⇒

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AO4840

AO4840E 40V Dual N-Channel AlphaMOS General Description Product Summary VDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AO4821, AO4822, AO4822A, AO4826, AO4828, AO4830, AO4832, AO4838, 50N06, AO4842, AO4850, AO4852, AO4854, AO4862, AO4882, AO4884, AO4886

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