AO4886 Specs and Replacement
Type Designator: AO4886
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SO-8
AO4886 substitution
- MOSFET ⓘ Cross-Reference Search
AO4886 datasheet
ao4886.pdf
AO4886 100V Dual N-Channel MOSFET General Description Product Summary VDS 100V The AO4886 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 3.3A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
ao4886.pdf
SMD Type MOSFET N-Channel Enhancement MOSFET AO4886 (KO4886) Features SOP-8 VDS (V) = 100V ID = 3.3A (VGS = 10V) RDS(ON) 80m (VGS = 10V) RDS(ON) 91m (VGS = 4.5V) 1.50 0.15 D1 D2 D1 D2 Top View Top View S2 1 8 D2 S2 1 8 D2 G2 D2 G2 D2 2 2 7 7 S1 3 6 D1 S1 3 6 D1 G1 4 5 D1 G1 G2 G1 4 5 D1 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratin... See More ⇒
ao4884.pdf
AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) ... See More ⇒
ao4882.pdf
AO4882 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AO4840, AO4842, AO4850, AO4852, AO4854, AO4862, AO4882, AO4884, AO3400, AO4892, AO4914, AO4922, AO4924, AO4932, AO4938, AO4940, AO4948
Keywords - AO4886 MOSFET specs
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