AO4886 - описание и поиск аналогов

 ..1. Size:550K  aosemi
 ao4886.pdf 

AO4886 100V Dual N-Channel MOSFET General Description Product Summary VDS 100V The AO4886 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 3.3A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 ..2. Size:2656K  kexin
 ao4886.pdf 

SMD Type MOSFET N-Channel Enhancement MOSFET AO4886 (KO4886) Features SOP-8 VDS (V) = 100V ID = 3.3A (VGS = 10V) RDS(ON) 80m (VGS = 10V) RDS(ON) 91m (VGS = 4.5V) 1.50 0.15 D1 D2 D1 D2 Top View Top View S2 1 8 D2 S2 1 8 D2 G2 D2 G2 D2 2 2 7 7 S1 3 6 D1 S1 3 6 D1 G1 4 5 D1 G1 G2 G1 4 5 D1 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratin

 9.1. Size:197K  aosemi
 ao4884.pdf 

AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

 9.2. Size:343K  aosemi
 ao4882.pdf 

AO4882 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

 9.3. Size:1076K  kexin
 ao4884.pdf 

SMD Type MOSFET Dual N-Channel MOSFET AO4884 (KO4884) SOP-8 Unit mm Features VDS (V) = 40V ID = 10A (VGS = 10V) 1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gat

 9.4. Size:1390K  kexin
 ao4882.pdf 

SMD Type MOSFET Dual N-Channel MOSFET AO4882 (KO4882) SOP-8 Unit mm Features VDS (V) = 40V 1.50 0.15 ID = 8A (VGS = 10V) RDS(ON) 19m (VGS = 10V) 1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-So

 9.5. Size:1630K  msksemi
 ao4884-ms.pdf 

www.msksemi.com AO4884-MS Semiconductor Compiance D1 D1 D2 D2 General Features S1 G1 S2 V = 40V I =10A DS D G2 R

 9.6. Size:1355K  msksemi
 ao4882-ms.pdf 

www.msksemi.com AO4882-MS Semiconductor Compiance Application D1 D1 D2 D2 Battery protection S1 G1 Load switch S2 G2 Uninterruptible power supply SOP-8 General Features D1 D1 D2 D2 V = 40V I = DS D 6A 8 7 6 5 R

 9.7. Size:1699K  cn vbsemi
 ao4884.pdf 

AO4884 www.VBsemi.tw Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 40 5.9 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 10 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch