AO4952 Specs and Replacement

Type Designator: AO4952

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105(0.0115) Ohm

Package: SO-8

AO4952 substitution

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AO4952 datasheet

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AO4952

AO4952 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 11A 11A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AO4952

SMD Type MOSFET Dual N-Channel MOSFET AO4952 (KO4952) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V 1.50 0.15 ID = 11 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V) 1 D2 5 S2/D1 RDS(ON) 15.5m (VGS = 4.5V) 6 S2/D1 2 D2 7 S2/D1 3 G1 SRFETTM Soft Recovery MOSFET Integrated Schottky Diode 8 G2 4 S1 N-Channel 2 VDS (V) = 30V ID = 1... See More ⇒

Detailed specifications: AO4892, AO4914, AO4922, AO4924, AO4932, AO4938, AO4940, AO4948, 7N65, AO5401E, AO5404E, AO5600E, AO5800E, AO5803E, AO5804E, AO6400, AO6401

Keywords - AO4952 MOSFET specs

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