All MOSFET. AO4952 Datasheet

 

AO4952 Datasheet and Replacement


   Type Designator: AO4952
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105(0.0115) Ohm
   Package: SO-8
 

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AO4952 Datasheet (PDF)

 ..1. Size:514K  aosemi
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AO4952

AO495230V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 11A 11A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:2277K  kexin
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AO4952

SMD Type MOSFETDual N-Channel MOSFETAO4952 (KO4952)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 11 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V)1 D2 5 S2/D1 RDS(ON) 15.5m (VGS = 4.5V)6 S2/D12 D27 S2/D13 G1SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode8 G24 S1N-Channel 2 VDS (V) = 30V ID = 1

Datasheet: AO4892 , AO4914 , AO4922 , AO4924 , AO4932 , AO4938 , AO4940 , AO4948 , STP75NF75 , AO5401E , AO5404E , AO5600E , AO5800E , AO5803E , AO5804E , AO6400 , AO6401 .

History: IPP90R1K2C3 | AOC2412 | F16F60CPM | HUFA75829D3ST | HGA195N15S | FTK3615 | FIR96N08PG

Keywords - AO4952 MOSFET datasheet

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