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AO6432 Specs and Replacement

Type Designator: AO6432

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.7 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSOP-6

AO6432 substitution

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AO6432 datasheet

 ..1. Size:218K  aosemi
ao6432.pdf pdf_icon

AO6432

AO6432 30V N-Channel MOSFET General Description Product Summary The AO6432 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 7.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

 ..2. Size:1430K  kexin
ao6432.pdf pdf_icon

AO6432

SMD Type MOSFET N-Channel MOSFET AO6432 (KO6432) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) = 30V 6 5 4 ID =7.5 A (VGS = 10V) RDS(ON) 24m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Parameter... See More ⇒

 ..3. Size:842K  cn vbsemi
ao6432.pdf pdf_icon

AO6432

AO6432 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC Co... See More ⇒

Detailed specifications: AO6408, AO6409, AO6409A, AO6415, AO6420, AO6422, AO6424, AO6424A, IRFB3607, AO6601, AO6602, AO6604, AO6800, AO6801, AO6801A, AO6801E, AO6802

Keywords - AO6432 MOSFET specs

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