All MOSFET. AO6432 Datasheet

 

AO6432 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO6432
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.5 nC
   trⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSOP-6

 AO6432 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO6432 Datasheet (PDF)

 ..1. Size:218K  aosemi
 ao6432.pdf

AO6432 AO6432

AO643230V N-Channel MOSFETGeneral Description Product SummaryThe AO6432 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 7.5A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

 ..2. Size:1430K  kexin
 ao6432.pdf

AO6432 AO6432

SMD Type MOSFETN-Channel MOSFETAO6432 (KO6432)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 30V 6 5 4 ID =7.5 A (VGS = 10V) RDS(ON) 24m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D 1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Parameter

 ..3. Size:842K  cn vbsemi
 ao6432.pdf

AO6432 AO6432

AO6432www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC Co

Datasheet: AO6408 , AO6409 , AO6409A , AO6415 , AO6420 , AO6422 , AO6424 , AO6424A , IRFB3607 , AO6601 , AO6602 , AO6604 , AO6800 , AO6801 , AO6801A , AO6801E , AO6802 .

History: AFN4924W | 2SK4022 | NCEP035N85GU | HGT055N15S

 

 
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