All MOSFET. FSS430R Datasheet

 

FSS430R Datasheet and Replacement


   Type Designator: FSS430R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO257AA
 
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FSS430R Datasheet (PDF)

 8.1. Size:46K  intersil
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FSS430R

FSS430D, FSS430R3A, 500V, 2.70 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)

Datasheet: FSS230R , FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , IRFB3607 , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR .

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