FSS430R Specs and Replacement

Type Designator: FSS430R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO257AA

FSS430R substitution

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FSS430R datasheet

 8.1. Size:46K  intersil
 fss430.pdf pdf_icon

FSS430R

FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) ... See More ⇒

Detailed specifications: FSS230R, FSS234D, FSS234R, FSS23A4D, FSS23A4R, FSS23AOD, FSS23AOR, FSS430D, IRFP450, FSS9130D, FSS9130R, FSS913AOD, FSS913AOR, FSS9230D, FSS9230R, FSS923AOD, FSS923AOR

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.