All MOSFET. AO6810 Datasheet

 

AO6810 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO6810

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.15 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 1.5 nS

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TSOP-6

AO6810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO6810 Datasheet (PDF)

1.1. ao6810.pdf Size:517K _aosemi

AO6810
AO6810

AO6810 30V Dual N-Channel MOSFET General Description Product Summary The AO6810 uses advanced trench technology to VDS 30V provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 3.5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) < 50mΩ applications. RDS(ON) (at VGS = 4.5V) < 70mΩ D1 D2 D1 D2 TSOP6 TSOP6 Top View Top View G1 G1

1.2. ao6810.pdf Size:1836K _kexin

AO6810
AO6810

SMD Type MOSFET Dual N-Channel MOSFET AO6810 (KO6810) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 ■ Features 6 5 4 ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON) < 50mΩ (VGS = 10V) 2 3 ● RDS(ON) < 70mΩ (VGS = 4.5V) 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D1 D2 D1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 G1 G2 G1 G2 S1 S2 S1 S2 ■ Abso

 

Datasheet: AO6604 , AO6800 , AO6801 , AO6801A , AO6801E , AO6802 , AO6804A , AO6808 , 2SK3568 , AO7400 , AO7401 , AO7403 , AO7404 , AO7405 , AO7407 , AO7408 , AO7410 .

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