FSS9130D MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS9130D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
Package: TO257AA
FSS9130D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS9130D Datasheet (PDF)
fss9130.pdf
FSS9130D,FSS9130R6A, -100V, 0.660 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
fss913ao.pdf
FSS913A0D, FSS913A0RData Sheet June 1999 File Number 4451.310A, -100V, 0.280 Ohm, Radiation FeaturesHardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280Power MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specificallydesigned for commercial an
Datasheet: FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , P0903BDG , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D .
History: IXFQ24N50P2 | 2N7109
History: IXFQ24N50P2 | 2N7109
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918