All MOSFET. FSS9130D Datasheet

 

FSS9130D Datasheet and Replacement


   Type Designator: FSS9130D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
   Package: TO257AA
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FSS9130D Datasheet (PDF)

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FSS9130D

FSS9130D,FSS9130R6A, -100V, 0.660 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

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FSS9130D

FSS913A0D, FSS913A0RData Sheet June 1999 File Number 4451.310A, -100V, 0.280 Ohm, Radiation FeaturesHardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280Power MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specificallydesigned for commercial an

Datasheet: FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , 4435 , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D .

History: MTN2604G6 | CEB10N65 | CED05N8 | MC08N005C | AON6794 | IRLR024 | BL10N70-A

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